Engineering Carbon Distribution in Silicon-Based Anodes at Multiple Scales

The successful commercialization of promising silicon-based anode materials has been hampered by their poor cycling stability caused by the huge volume change. Integration of the carbon matrix with silicon-based (C/Si-based) anode materials has been demonstrated to be a powerful solution to achieve satisfactory electrochemical performance. This minireview aims to outline recent developments on C/Si-based composites, with the emphasis on the importance of carbon distribution at multiple scales. In addition, the forms of the carbon framework (carbon sources and doping of heteroatoms) have been summarized. Particularly, a novel C/Si-based hybrid with carbon distributed at the atomic scale has been highlighted.     

Magnetic field as a means to identify initiating reaction in oxidation of organic substances with molecular oxygen

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6英寸低位错锗单晶生长热场设计

锗片作为衬底材料已在空间太阳电池领域得到广泛的应用,新型锗基空间太阳能电池对锗片的需求由4英寸(1英寸=2.54 cm)提高到6英寸后,低位错锗单晶的生长难度增大。本文设计开发了一种适用于直拉法生长大尺寸、低位错锗单晶的双加热器热场系统,模拟研究了不同形状主加热器的热场分布,从而得到最优的热场环境。研究发现:渐变长度为L/h=1/2、渐变率α为65°的渐变型主加热器热场结构能够获得最佳的热场分布,有利于低位错单晶的生长。经验证,生长的锗单晶热应力较低,位错密度在310～450 cm^-2范围内。     

固体核磁共振结合密度泛函理论计算研究SSZ-39分子筛的钠离子落位与铝分布

具有AEI结构的SSZ-39分子筛的骨架外阳离子落位和铝分布对其催化性能影响显著.AEI笼中有三个结晶学不等价位，且铝取代T位具有一定的倾向性.本文结合固体核磁共振（NMR）技术（²⁷Al/²³Na MQ MAS NMR），以及密度泛函理论（DFT）计算，研究了不同硅铝比Na-SSZ-39分子筛中的Na⁺落位和铝分布.在孤立铝分布的情况下，铝原子优先占据于T3位，Na⁺主要落位于AEI笼中的SIIa0和SIII'a0位点上，其中SIII'a0位点的优先度较高，此外少部分Na⁺还落位于六棱柱内部的SIa0.当铝对存在时，AlSiSiAl分布的铝对占据六元环的对位（T3-T3），对应的Na⁺分别落位于SIIa1和SⅢ'a1位点.随着分子筛结构的部分破坏，游离的Na⁺可能形成明显的SIII'b位点.本文可加深对SSZ-39分子筛构效关系的理解，为更好地调控催化性能奠定基础.     

InSb芯片碎裂与迸溅金点的关系

批量生产中经常发生的锑化铟(InSb)芯片碎裂问题制约着InSb红外焦平面探测器(IRFPAs)成品率的提升.经分析认为:低周期液氮冲击下发生在器件边沿区域的InSb芯片破碎与该区域中迸溅金点的存在有关.为从理论上明晰迸溅金点对InSb芯片局部碎裂的影响,本文建立了包含迸溅金点的InSb IRFPAs结构模型,分析了迸溅金点的存在对应力分布的影响.在此基础上,在应力集中处预置不同长度的初始裂纹用以描述InSb晶片中的位错,以能量释放率为判据,探究InSb芯片碎裂与迸溅金点和位错线长短的关系.结论如下:1)迸溅金点的存在对InSb芯片碎裂的影响是局部的,在迸溅金点与InSb芯片接触区域的两侧会形成两个应力集中点; 2)环绕预置裂纹的能量释放率会随着预置裂纹长度的增加而加速增大,当预置裂纹长度接近InSb芯片上表面时,能量释放率近乎指数增加,并在预置裂纹贯穿InSb芯片时达到最大值; 3)迸溅金点引起的InSb芯片破碎属于Ⅰ型断裂失效模式,在多周期液氮冲击中,位错线在应力集中效应的驱使下逐步扩展,直至贯穿InSb芯片,最终形成宏观碎裂失效现象.     

Triterpenes and limonoids of Cedrela: Distribution,biosynthesis, and 1H and 13C NMR data

Cedrela genus, a member of the Meliaceae family, presents both chemical characteristics associated with and those that distinguish it from the rest of its members. The presence of triterpenes and limonoids is the characteristic of the Meliaceae family, but the class and type of these chemical constituents are distinctive for each genus. Cedrela includes cycloartane, ursane, oleanane, tirucallane, butyrospermane, and apotirucallane triterpenes, and its limonoids belongs to six class and nine types, known as class Ia-type havanensines, class Ib-type delevoyin, class II-type gedunin, class IIIb-type andirobin, class IIIg-type mexicanolide, class IVa-type evoludone, class Va-type obacunol, class V-type limonin, and class VIII. Each of these structural arrangements includes specific traits, defined by their biosynthetic origin, which can be established by means of structural elucidation techniques, particularly ¹H and ¹³C NMR, which assisted by 2D NMR techniques, allowing to deduce their structures unequivocally. The constant presence of these skeletal arrangements in Cedrela ensures that they are its chemophenetic markers and their recurrence is an important criterion for their identity. This review is a compilation of the occurrence of triterpenes and limonoids in Cedrela genus, detailing their biosynthetic association and collecting and organizing their NMR data, with the purpose of facilitating its location, analysis, and use in the phytochemical study of species from this genus.     

Theoretical studies of the concentration dependences of d–d transition band,g factors,and local distortion for V4+ in Li2O–PbO–B2O3–P2O5 glasses

In this work, the g factors, d–d transition band, local distortion, and their concentration dependences for impurity V⁴⁺ in 20Li₂O–20PbO–45B₂O₃–(15 − x)P₂O₅:V₂O₅ (0 ≤ x ≤ 2.5 mol%) glasses are theoretically investigated by using perturbation formulas of g factors for a tetragonally compressed octahedral 3d¹ cluster. In the light of the cubic polynomial concentration functions for cubic field parameter D_q, covalency factor N, and relative tetragonal compression ratio ρ, the calculated concentration dependences of d–d transition band and g factors for V⁴⁺ show good agreement with the experimental data. With increasing x, N (≈0.7682–0.8165) displays the monotonously increasing trend, whereas ρ (≈6.5–4.2%) and D_q (≈1504.9–1481.1 cm⁻¹) exhibit the decreasing tendencies. The above concentration dependences can be ascribed to the modifications of the V⁴⁺–O²⁻ bonding and orbital admixtures around the impurity V⁴⁺ due to the effects of V₂O₅ doping on the stability of the glass network, the strength of local crystal fields, and the electron cloud distribution.